BSH207,135 NXP Semiconductors, BSH207,135 Datasheet - Page 6

MOSFET P-CH 12V 1.52A SOT457

BSH207,135

Manufacturer Part Number
BSH207,135
Description
MOSFET P-CH 12V 1.52A SOT457
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BSH207,135

Package / Case
SC-74-6
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
1.52A
Vgs(th) (max) @ Id
600mV @ 1mA
Gate Charge (qg) @ Vgs
8.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
500pF @ 9.6V
Power - Max
417mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.12 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.52 A
Power Dissipation
417 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055227135
BSH207 /T3
BSH207 /T3
Philips Semiconductors
MECHANICAL DATA
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
August 1998
P-channel enhancement mode
MOS transistor
discharge during transport or handling.
Plastic surface mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT457
1.1
0.9
A
0.013
0.1
A 1
y
pin 1
index
0.40
0.25
b p
6
1
IEC
Fig.15. SOT457 surface mounting package.
e
0.26
0.10
c
D
5
2
3.1
2.7
D
b p
JEDEC
1.7
1.3
E
REFERENCES
0
4
0.95
3
e
w
B
M
H E
3.0
2.5
SC-74
scale
B
EIAJ
6
1
0.6
0.2
L p
A
0.33
0.23
Q
A 1
2 mm
0.2
v
H E
E
0.2
w
detail X
PROJECTION
0.1
EUROPEAN
y
L p
Q
A
c
ISSUE DATE
X
v
97-02-28
M
A
SOT457
Product specification
BSH207
Rev 1.000

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