BSH207,135 NXP Semiconductors, BSH207,135 Datasheet - Page 5

• Manufacturer Part Number: BSH207,135
• Description: MOSFET P-CH 12V 1.52A SOT457
• Manufacturer: NXP Semiconductors

Specifications of BSH207,135

• Package / Case: SC-74-6
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 1.52A
• Vgs(th) (max) @ Id: 600mV @ 1mA
• Gate Charge (qg) @ Vgs: 8.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 500pF @ 9.6V
• Power - Max: 417mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.52 A
• Power Dissipation: 417 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055227135; BSH207 /T3; BSH207 /T3

Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
-5
-4
-3
-2
-1
0
0
Gate-source voltage, VGS (V)
VDD = 10 V
RD = 10 Ohms
Tj = 25 C
1
2
3
Gate charge, (nC)
V
GS
4
= f(Q
5
G
)
6
7
BSH207
8
9
5
4.5
3.5
2.5
1.5
0.5
I
5
4
3
2
1
0
F
0
= f(V
Source-Drain Diode Current, IF (A)
Fig.14. Typical reverse diode current.
SDS
0.2
); conditions: V
Drain-Source Voltage, VSDS (V)
0.4
150 C
0.6
GS
0.8
= 0 V; parameter T
Tj = 25 C
Product specification
1
1.2
BSH207
BSH207
Rev 1.000
1.4
j