NXP Semiconductors designed the LPC2420/2460 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
NXP Semiconductors designed the LPC2458 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
NXP Semiconductors designed the LPC2468 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
NXP Semiconductors designed the LPC2470 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
NXP Semiconductors designed the LPC2478 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Philips Semiconductors P-channel enhancement mode MOS transistor FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold ...
Philips Semiconductors P-channel enhancement mode MOS transistor ELECTRICAL CHARACTERISTICS T = 25˚C unless otherwise specified j SYMBOL PARAMETER V Drain-source breakdown (BR)DSS voltage V Gate threshold voltage GS(TO) R Drain-source on-state DS(ON) resistance g Forward transconductance fs I Gate source ...
Philips Semiconductors P-channel enhancement mode MOS transistor MECHANICAL DATA Plastic surface mounted package; 6 leads y DIMENSIONS (mm are the original dimensions) UNIT 0.1 1.1 mm 0.013 0.9 OUTLINE VERSION SOT457 Notes 1. This product is supplied ...
Philips Semiconductors P-channel enhancement mode MOS transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification ...