IRFP26N60LPBF Vishay, IRFP26N60LPBF Datasheet - Page 6

MOSFET N-CH 600V 26A TO-247AC

IRFP26N60LPBF

Manufacturer Part Number
IRFP26N60LPBF
Description
MOSFET N-CH 600V 26A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFP26N60LPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
5020pF @ 25V
Power - Max
470W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.25 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
26 A
Power Dissipation
470000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
26A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
250mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP26N60LPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP26N60LPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
IRFP26N60L, SiHFP26N60L
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5.0
4.0
3.0
2.0
6.0
Fig. 13 - Threshold Voltage vs. Temperature
Fig. 14a - Unclamped Inductive Test Circuit
Fig. 14b - Unclamped Inductive Waveforms
-75
I
AS
R
20 V
G
V
-50
DS
t
p
-25
T J , Temperature (°C)
I
AS
D.U.T
I D = 250 μA
0
0.01 Ω
L
t
p
25
50
V
15 V
75
DS
Driver
This datasheet is subject to change without notice.
100 125
+
- V
A
DD
150
1050
Fig. 14c - Maximum Avalanche Energy vs. Drain Current
600
900
300
750
450
150
0
V
Fig. 15a - Basic Gate Charge Waveform
25
GS
12 V
V
Fig. 15b - Gate Charge Test Circuit
V
V
G
GS
Same type as D.U.T.
Current regulator
Starting T J , Junction Temperature (°C)
Q
0.2 µF
50
GS
Current sampling resistors
3 mA
50 kΩ
Charge
0.3 µF
Q
75
Q
GD
G
I
G
S11-0487-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91218
100
D.U.T.
I
D
TOP
BOTTOM
+
-
125
V
DS
I D
12 A
16 A
26 A
150

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