IRFP26N60LPBF Vishay, IRFP26N60LPBF Datasheet - Page 2

• Manufacturer Part Number: IRFP26N60LPBF
• Description: MOSFET N-CH 600V 26A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP26N60LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5020pF @ 25V
• Power - Max: 470W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 26 A
• Power Dissipation: 470000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 26A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP26N60LPBF

IRFP26N60L, SiHFP26N60L
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C
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2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
C
DS
oss
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
eff. (ER) is a fixed capacitance that stores the same energy as C
J
= 25 °C, unless otherwise noted)
a
C
SYMBOL
This datasheet is subject to change without notice.
oss
SYMBOL
V
C
R
V
oss
C
t
t
I
R
I
I
R
R
V
DS(on)
C
C
Q
V
GS(th)
Q
RRM
GSS
eff. (ER)
d(on)
d(off)
I
Q
DSS
g
Q
t
DS
SM
t
I
t
t
on
thCS
thJC
DS
oss
SD
thJA
iss
rss
S
rr
fs
gs
gd
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
GS
GS
V
GS
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
T
Reference to 25 °C, I
= 10 V
= 10 V
J
= 0 V
T
T
J
= 480 V, V
= 25 °C, I
J
J
= 25 °C, I
= 125 °C, dI/dt = 100 A/μs
= 125 °C, dI/dt = 100 A/μs
V
V
V
V
f = 1.0 MHz, see fig. 5
R
oss
see fig. 11a and 11b
TYP.
V
TEST CONDITIONS
0.24
DD
DS
DS
GS
T
oss
g
DS
-
-
J
= 4.3 ,V
while V
= 600 V, V
= 300 V, I
= V
= 0 V, I
= 25 °C, I
V
while V
= 50 V, I
V
GS
V
T
DS
S
GS
GS
GS
I
F
J
D
= 26 A, V
= ± 30 V
= 25 °C
V
= 26 A, V
= 25 V,
, I
= 26 A, V
= 0 V,
see fig. 7 and 15
DS
= 0 V, T
DS
D
D
DS
GS
= 250 μA
D
= 250 μA
D
is rising from 0 % to 80 % V
F
= 0 V to 480 V
GS
I
D
is rising from 0 % to 80 % V
= 16 A
= 26 A,
= 26 A
= 10 V
= 16 A
D
= 0 V
GS
J
GS
= 1 mA
DS
= 125 °C
G
b
= 0 V
= 0 V
= 480 V,
b
b
b
b
MAX.
b
b
0.27
D
S
c
40
-
MIN.
600
3.0
13
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0487-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
DS
DS
Document Number: 91218
.
TYP.
5020
1050
0.33
0.21
.
450
230
170
110
170
210
670
7.3
34
31
47
42
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
1000
1570
0.25
180
100
250
320
5.0
2.0
1.5
S
50
61
85
26
11
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
mA
nA
μA
nC
nC
pF
ns
ns

V
V
S
A
V
A