IRFP26N60LPBF Vishay, IRFP26N60LPBF Datasheet - Page 3

• Manufacturer Part Number: IRFP26N60LPBF
• Description: MOSFET N-CH 600V 26A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP26N60LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5020pF @ 25V
• Power - Max: 470W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 26 A
• Power Dissipation: 470000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 26A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP26N60LPBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91218
S11-0487-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1000
0.01
100
100
0.1
0.1
10
10
1
1
0.1
0.1
Bottom
Top
Fig. 1 - Typical Output Characteristics
Top
Bottom
Fig. 2 - Typical Output Characteristics
VGS
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
15 V
12 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1
1
20 μs PULSE WIDTH
T J = 25 °C
20 μs PULSE WIDTH
T J = 150 °C
5.5 V
10
5.5 V
10
This datasheet is subject to change without notice.
100
100
1000.00
100.00
10.00
IRFP26N60L, SiHFP26N60L
3.0
2.5
2.0
1.5
1.0
1.00
0.10
0.5
Fig. 4 - Normalized On-Resistance vs. Temperature
- 60
2.0
V GS = 10 V
I D = 26 A
Fig. 3 - Typical Transfer Characteristics
- 40
T J = 150 °C
4.0
- 20
V GS , Gate-to-Source Voltage (V)
0
6.0
T J , Junction Temperature
20 40
T J = 25 °C
8.0
www.vishay.com/doc?91000
60 80 100 120 140 160
V DS = 50 V
20 μs PULSE WIDTH
10.0
Vishay Siliconix
12.0
www.vishay.com
14.0
16.0
3