IRFP26N60LPBF Vishay, IRFP26N60LPBF Datasheet - Page 5

• Manufacturer Part Number: IRFP26N60LPBF
• Description: MOSFET N-CH 600V 26A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP26N60LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5020pF @ 25V
• Power - Max: 470W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 26 A
• Power Dissipation: 470000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 26A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP26N60LPBF

Document Number: 91218
S11-0487-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1000
100
0.1
10
1
1
Fig. 11a - Switching Time Test Circuit
T
T
Single Pulse
0.0001
Fig. 9a - Maximum Safe Operating Area
C
J
0.001
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
0.01
= 150 °C
G
= 25 °C
0.1
10 V
V
1
OPERATING IN THIS AREA LIMITED
GS
1E-006
V
DS
10
V
D = 0.50
, Drain-to-Source Voltage (V)
DS
0.10
0.20
0.05
0.02
0.01
BY R
(THERMAL RESPONSE)
100
D.U.T.
SINGLE PULSE
DS(on)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
1E-005
R
D
1000
100 µs
10 ms
1 ms
This datasheet is subject to change without notice.
+
-
V
DD
10000
0.0001
t , Rectangular Pulse Duration (s)
0.001
Fig. 10 - Maximum Drain Current vs. Case Temperature
IRFP26N60L, SiHFP26N60L
30
25
20
15
10
5
0
90 %
10 %
Fig. 11b - Switching Time Waveforms
25
V
V
DS
GS
0.01
t
d(on)
50
T C , Case Temperature (°C)
t
r
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + T C
Notes:
75
www.vishay.com/doc?91000
P DM
Vishay Siliconix
0.1
100
t
d(off)
t 1
t
t 2
f
www.vishay.com
125
150
1
5