SUM90P10-19L-E3 Vishay, SUM90P10-19L-E3 Datasheet - Page 4
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SUM90P10-19L-E3
Manufacturer Part Number
SUM90P10-19L-E3
Description
MOSFET P-CH 100V 90A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Specifications of SUM90P10-19L-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
19 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
326nC @ 10V
Input Capacitance (ciss) @ Vds
11100pF @ 50V
Power - Max
375W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 50 C
Configuration
Single
Resistance Drain-source Rds (on)
0.019 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17.2 A
Power Dissipation
13600 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-90A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
21mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.019Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Operating Temp Range
-50C to 175C
Operating Temperature Classification
Automotive
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM90P10-19L-E3
SUM90P10-19L-E3TR
SUM90P10-19L-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUM90P10-19L-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SUM90P10-19L-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SUM90P10-19L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.3
400
350
300
250
200
150
100
0.9
0.7
0.5
0.3
0.1
100
50
10
0
- 50
1
25
0.0
- 25
Source-Drain Diode Forward Voltage
Power Derating (Junction-to-Case)
T
50
J
= 150 °C
0
T - Case-Temperature (°C)
0.3
V
C
SD
Threshold Voltage
T
25
75
J
- Source-to-Drain Voltage (V)
- Temperature (°C)
50
100
0.6
I
D
75
= 10 mA
125
100
25 °C
0.9
125
150
150
175
175
1.2
6000
5000
4000
3000
2000
1000
1000
0.10
0.08
0.06
0.04
0.02
0.00
100
0.1
10
0.0001
0
1
0.1
1
Single Pulse, Junction-to-Case (T
Limited by R
* V
On-Resistance vs. Gate-to-Source Voltage
2
GS
> minimum V
V
V
DS
3
0.001
GS
- Drain-to-Source Voltage (V)
DS(on)
Safe Operating Area
- Gate-to-Source Voltage (V)
4
1
*
Single pulse
T
Time (s)
c
GS
25 °C
= 25 °C
5
at which R
0.01
125 °C
S09-0659-Rev. E, 20-Apr-09
6
Document Number: 73474
10
DS(on)
7
0.10
is specified
C
8
= 25 °C)
9
100
10
1
10 µs
1 ms
10 ms
100 µs
DC