SUM90P10-19L-E3 Vishay, SUM90P10-19L-E3 Datasheet - Page 4

• Manufacturer Part Number: SUM90P10-19L-E3
• Description: MOSFET P-CH 100V 90A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SUM90P10-19L-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 326nC @ 10V
• Input Capacitance (ciss) @ Vds: 11100pF @ 50V
• Power - Max: 375W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 50 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17.2 A
• Power Dissipation: 13600 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -90A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 21mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.019Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -50C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM90P10-19L-E3; SUM90P10-19L-E3TR

SUM90P10-19L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.3
400
350
300
250
200
150
100
0.9
0.7
0.5
0.3
0.1
100
50
10
0
- 50
1
25
0.0
- 25
Source-Drain Diode Forward Voltage
Power Derating (Junction-to-Case)
T
50
J
= 150 °C
0
T - Case-Temperature (°C)
0.3
V
C
SD
Threshold Voltage
T
25
75
J
- Source-to-Drain Voltage (V)
- Temperature (°C)
50
100
0.6
I
D
75
= 10 mA
125
100
25 °C
0.9
125
150
150
175
175
1.2
6000
5000
4000
3000
2000
1000
1000
0.10
0.08
0.06
0.04
0.02
0.00
100
0.1
10
0.0001
0
1
0.1
1
Single Pulse, Junction-to-Case (T
Limited by R
* V
On-Resistance vs. Gate-to-Source Voltage
2
GS
> minimum V
V
V
DS
3
0.001
GS
- Drain-to-Source Voltage (V)
DS(on)
Safe Operating Area
- Gate-to-Source Voltage (V)
4
1
*
Single pulse
T
Time (s)
c
GS
25 °C
= 25 °C
5
at which R
0.01
125 °C
S09-0659-Rev. E, 20-Apr-09
6
Document Number: 73474
10
DS(on)
7
0.10
is specified
C
8
= 25 °C)
9
100
10
1
10 µs
1 ms
10 ms
100 µs
DC