SUM90P10-19L-E3 Vishay, SUM90P10-19L-E3 Datasheet - Page 2

MOSFET P-CH 100V 90A D2PAK

SUM90P10-19L-E3

Manufacturer Part Number
SUM90P10-19L-E3
Description
MOSFET P-CH 100V 90A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr

Specifications of SUM90P10-19L-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
19 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
326nC @ 10V
Input Capacitance (ciss) @ Vds
11100pF @ 50V
Power - Max
375W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 50 C
Configuration
Single
Resistance Drain-source Rds (on)
0.019 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17.2 A
Power Dissipation
13600 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-90A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
21mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.019Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Operating Temp Range
-50C to 175C
Operating Temperature Classification
Automotive
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM90P10-19L-E3
SUM90P10-19L-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUM90P10-19L-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SUM90P10-19L-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SUM90P10-19L-E3
0
Company:
Part Number:
SUM90P10-19L-E3
Quantity:
70 500
SUM90P10-19L
Vishay Siliconix
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
J
a
= 25 °C, unless otherwise noted
a
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
I
I
C
V
D(on)
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
GSS
I
DSS
Q
DS
g
Q
R
I
SM
t
t
t
oss
t
DS
t
SD
iss
rss
S
rr
fs
gs
gd
a
b
r
f
rr
g
g
/T
/T
J
J
I
V
F
V
V
I
DS
DS
= - 20 A, dI/dt = 100 A/µs, T
DS
D
V
DS
≅ - 90 A, V
= - 50 V, V
= - 100 V, V
= - 50 V, V
V
V
V
V
V
= - 50 V, V
V
V
V
V
DD
DS
DS
DS
GS
GS
DS
DS
GS
Test Conditions
= V
= - 50 V, R
= - 100 V, V
≥ 10 V, V
= - 4.5 V, I
= 0 V, V
= 0 V, I
= - 10 V, I
= - 15 V, I
I
D
T
I
GS
f = 1 MHz
GEN
S
= - 250 µA
GS
C
GS
= - 20 A
GS
= 25 °C
GS
, I
= - 4.5 V, I
D
= - 10 V, I
= - 10 V, R
D
GS
= 0 V, T
GS
= 0 V, f = 1 MHz
= - 250 µA
D
D
= - 250 µA
D
L
= ± 20 V
GS
= - 20 A
= - 20 A
= 0.56 Ω
= - 10 V
= - 15 A
= 0 V
J
D
D
= 175 °C
g
J
= - 90 A
= - 90 A
= 25 °C
= 1 Ω
- 100
Min.
- 90
- 1
0.0156
0.0173
11100
- 125
1690
Typ.
- 0.8
700
217
510
145
870
220
3.5
5.9
80
97
42
51
20
80
56
24
S09-0659-Rev. E, 20-Apr-09
Document Number: 73474
± 100
0.019
0.021
- 500
- 250
Max.
1300
- 1.5
326
146
855
220
- 90
120
330
- 3
- 1
30
mV/°C
Unit
nC
nC
nA
µA
pF
ns
ns
ns
Ω
Ω
V
V
A
S
A
V

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