SUM90P10-19L_08 VISHAY [Vishay Siliconix], SUM90P10-19L_08 Datasheet

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SUM90P10-19L_08

Manufacturer Part Number
SUM90P10-19L_08
Description
P-Channel 100-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 sec.
d. Maximum under Steady State conditions is 40 °C/W.
Document Number: 73474
S-71207-Rev. D, 18-Jun-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
- 100
DS
Ordering Information: SUM90P10-19L-E3 (Lead (Pb)-free)
(V)
G
Top View
TO-263
0.021 at V
0.019 at V
D
r
S
DS(on)
GS
GS
J
(Ω)
= 150 °C)
= - 4.5 V
= - 10 V
b, d
Drain Connected to Tab
P-Channel 100-V (D-S) MOSFET
I
D
- 90
- 85
(A)
A
= 25 °C, unless otherwise noted
Q
Steady State
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
97 nC
g
A
t ≤ 10 sec
C
C
A
C
C
C
A
A
A
(Typ)
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
®
Power MOSFET
Typical
0.33
G
8
P-Channel MOSFET
- 50 to 175
- 17.2
- 9.9
13.6
4.5
Limit
- 9
- 100
- 250
± 20
- 90
- 52
- 90
- 70
245
375
125
b, c
b, c
b, c
b, c
b, c
S
D
SUM90P10-19L
Maximum
0.4
11
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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SUM90P10-19L_08 Summary of contents

Page 1

... GS - 100 0.021 4 TO-263 Drain Connected to Tab Top View Ordering Information: SUM90P10-19L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy ...

Page 2

... SUM90P10-19L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Drain-Source Breakdown Voltage V Temperature Coefficient DS ΔV V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 73474 S-71207-Rev. D, 18-Jun- 100 120 160.0 200.0 240.0 SUM90P10-19L Vishay Siliconix ° 125 ° 0.0 1.0 2.0 V – Gate-to-Source Voltage (V) GS Transfer Characteristics 15000 C ...

Page 4

... SUM90P10-19L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 0.0 0.3 0.6 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.9 0.7 I 0.5 0.3 0.1 - 0 – Temperature (°C) J Threshold Voltage 400 350 300 250 200 150 100 100 T – Case-Temperature (°C) ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73474. Document Number: 73474 S-71207-Rev. D, 18-Jun-07 100 125 150 175 0.001 0.01 Square Wave Pulse Duration (Sec) Normalized Thermal Transient Impedance, Junction-to-Case SUM90P10-19L Vishay Siliconix 1000 100 10 1 0.1 0.00001 0.0001 0.001 0.01 t – ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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