SUM90P10-19L-E3 Vishay, SUM90P10-19L-E3 Datasheet

MOSFET P-CH 100V 90A D2PAK

SUM90P10-19L-E3

Manufacturer Part Number
SUM90P10-19L-E3
Description
MOSFET P-CH 100V 90A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr

Specifications of SUM90P10-19L-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
19 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
326nC @ 10V
Input Capacitance (ciss) @ Vds
11100pF @ 50V
Power - Max
375W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 50 C
Configuration
Single
Resistance Drain-source Rds (on)
0.019 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17.2 A
Power Dissipation
13600 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-90A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
21mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.019Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Operating Temp Range
-50C to 175C
Operating Temperature Classification
Automotive
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM90P10-19L-E3
SUM90P10-19L-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUM90P10-19L-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SUM90P10-19L-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SUM90P10-19L-E3
0
Company:
Part Number:
SUM90P10-19L-E3
Quantity:
70 500
Document Number: 73474
S09-0659-Rev. E, 20-Apr-09
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
- 100
DS
Ordering Information: SUM90P10-19L-E3 (Lead (Pb)-free)
(V)
G
Top View
TO-263
0.021 at V
0.019 at V
D
R
S
DS(on)
GS
GS
J
= - 4.5 V
(Ω)
= - 10 V
= 150 °C)
b, d
Drain Connected to Tab
P-Channel 100-V (D-S) MOSFET
I
D
- 90
- 85
(A)
A
= 25 °C, unless otherwise noted
Q
Steady State
97 nC
T
T
T
g
T
L = 0.1 mH
T
T
T
T
T
T
C
A
C
A
(Typ.)
C
A
C
A
C
A
t ≤ 10 s
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
thJC
I
I
AS
thJA
GS
DS
AS
D
S
D
stg
®
Power MOSFET
Typical
0.33
G
8
P-Channel MOSFET
- 55 to 175
- 17.2
- 9.9
13.6
4.5
Limit
- 9
- 100
- 250
± 20
- 90
- 52
- 90
- 70
245
375
125
b, c
b, c
b, c
b, c
b, c
SUM90P10-19L
S
D
Maximum
0.4
11
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SUM90P10-19L-E3

SUM90P10-19L-E3 Summary of contents

Page 1

... 100 0.021 4 TO-263 Drain Connected to Tab Top View Ordering Information: SUM90P10-19L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... SUM90P10-19L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Drain-Source Breakdown Voltage V Temperature Coefficient DS ΔV V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73474 S09-0659-Rev. E, 20-Apr- 100 120 160.0 200.0 240.0 SUM90P10-19L Vishay Siliconix ° 125 ° 0.0 1.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 15 000 C iss 12 000 9000 6000 C rss 3000 ...

Page 4

... SUM90P10-19L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.9 0.7 I 0.5 0.3 0.1 - 0 Temperature (°C) J Threshold Voltage 400 350 300 250 200 150 100 100 T - Case-Temperature (°C) ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73474. Document Number: 73474 S09-0659-Rev. E, 20-Apr-09 100 125 150 175 0.001 0.01 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM90P10-19L Vishay Siliconix 1000 100 10 1 0.1 0.00001 0.0001 0.001 0.01 t ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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