IRF9Z34STRLPBF Vishay, IRF9Z34STRLPBF Datasheet - Page 6

• Manufacturer Part Number: IRF9Z34STRLPBF
• Description: MOSFET P-CH 60V 18A D2PAK
• Manufacturer: Vishay

Specifications of IRF9Z34STRLPBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Gate Charge Qg: 34 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.14 Ohm at 10 V
• Forward Transconductance Gfs (max / Min): 5.9 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -18A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 140mohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
www.vishay.com
6
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
- 10 V
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91093_12c
1200
1000
600
800
400
200
0
25
V
DD
Starting T
= - 25 V
50
J
, Junction Temperature (°C)
75
100
125
Top
Bottom
12 V
150
Fig. 13b - Gate Charge Test Circuit
V
GS
- 7.3 A
- 13 A
- 18 A
Same type as D.U.T.
I
Current regulator
D
0.2 µF
175
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
I
G
S10-1728-Rev. B, 02-Aug-10
Document Number: 91093
D.U.T.
I
D
+
-
V
DS