IRF9Z34STRLPBF Vishay, IRF9Z34STRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRF9Z34STRLPBF
• Description: MOSFET P-CH 60V 18A D2PAK
• Manufacturer: Vishay

Specifications of IRF9Z34STRLPBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Gate Charge Qg: 34 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.14 Ohm at 10 V
• Forward Transconductance Gfs (max / Min): 5.9 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -18A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 140mohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91093_05
91093_06
2000
1600
1200
800
400
20
16
12
0
8
4
0
10
0
0
I
D
= - 18 A
- V
5
DS ,
Q
G
Drain-to-Source Voltage (V)
10
, Total Gate Charge (nC)
15
V
C
C
C
V
GS
iss
rss
oss
DS
= C
= 0 V, f = 1 MHz
= C
= C
= - 30 V
20
10
gs
gd
ds
1
V
+ C
+ C
DS
gd
gd
= - 48 V
25
For test circuit
see figure 13
, C
C
C
C
ds
iss
oss
rss
Shorted
30
35
91093_07
91093_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
0
Fig. 8 - Maximum Safe Operating Area
1
1
3
2
5
2
5
2
5
2
0.0
0.1
2
- V
- V
1.0
5
SD
DS
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
175
2
°
T
T
Single Pulse
C
2.0
C
J
by R
= 175 °C
= 25 °C
5
10
DS(on)
S10-1728-Rev. B, 02-Aug-10
3.0
2
Document Number: 91093
25
°
C
5
100
1
10
10
10
ms
4.0
ms
2
µs
V
µs
GS
2
= 0 V
5
5.0
10
3