IRF9Z34STRLPBF Vishay, IRF9Z34STRLPBF Datasheet - Page 5

• Manufacturer Part Number: IRF9Z34STRLPBF
• Description: MOSFET P-CH 60V 18A D2PAK
• Manufacturer: Vishay

Specifications of IRF9Z34STRLPBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Gate Charge Qg: 34 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.14 Ohm at 10 V
• Forward Transconductance Gfs (max / Min): 5.9 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -18A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 140mohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 91093
S10-1728-Rev. B, 02-Aug-10
Vary t
required I
91093_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
20
16
12
91093_11
AS
8
4
0
25
R
- 10 V
g
10
0.1
10
-2
1
V
10
50
DS
-5
T
0.05
0.02
0.01
D = 0.5
0.2
0.1
C
t
p
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T.
100
0.01 Ω
L
10
-4
125
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Single Pulse
(Thermal Response)
150
10
+
-
t
-3
V
175
1
, Rectangular Pulse Duration (s)
DD
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
10 %
90 %
DS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
- 10 V
V
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
t
p
1
j
= P
P
D.U.T.
DM
DM
R
Vishay Siliconix
x Z
D
t
d(off)
t
1
V
1
thJC
/t
DS
2
t
2
+ T
t
f
C
+
-
www.vishay.com
10
V
V
DD
DD
5