IRF9Z34STRLPBF Vishay, IRF9Z34STRLPBF Datasheet - Page 3

• Manufacturer Part Number: IRF9Z34STRLPBF
• Description: MOSFET P-CH 60V 18A D2PAK
• Manufacturer: Vishay

Specifications of IRF9Z34STRLPBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Gate Charge Qg: 34 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.14 Ohm at 10 V
• Forward Transconductance Gfs (max / Min): 5.9 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -18A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 140mohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91093
S10-1728-Rev. B, 02-Aug-10
91093_01
91093_02
10
10
10
10
10
10
2
2
0
1
0
1
10
10
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
-1
Bottom
-1
Top
Bottom
Top
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
DS ,
DS
V
V
GS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
=
=
25 °C
175 °C
10
10
- 4.5 V
- 4.5 V
1
1
91093_04
91093_03
Fig. 4 - Normalized On-Resistance vs. Temperature
10
2.5
2.0
1.5
1.0
0.5
0.0
10
Fig. 3 - Typical Transfer Characteristics
0
1
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
4
I
V
D
GS
= - 18 A
= - 10 V
- V
5
T
GS ,
J ,
Junction Temperature (°C)
25
Gate-to-Source Voltage (V)
°
6
C
175
7
Vishay Siliconix
°
C
20 µs Pulse Width
V
8
DS
= -
www.vishay.com
25 V
9
10
3