IRF9Z20 Vishay, IRF9Z20 Datasheet - Page 7

• Manufacturer Part Number: IRF9Z20
• Description: MOSFET P-CH 50V 9.7A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9Z20

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z20

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90121.
Document Number: 90121
S09-0074-Rev. A, 02-Feb-09
90121_18
Fig. 17 - Typical Time to Accumulated 1 % Gate Failure
10
10
10
10
10
10
12
10
8
6
4
2
50
70
Temperature (°C)
14 V
16 V
18 V
20 V
90
110
130
150
90121_19
Fig. 18 - Typical High Temperature Reverse Bias (HTRB)
10
10
10
10
1
4
3
2
50
20 FIT’s
99 % UCL
70
IRF9Z20, SiHF9Z20
Temperature (°C)
Failure Rate
90 % UCL
90
60 % UCL
Vishay Siliconix
110
130
www.vishay.com
150
10
1
0.1
10
10
-4
-2
-3
7