IRF9Z20 Vishay, IRF9Z20 Datasheet - Page 2

• Manufacturer Part Number: IRF9Z20
• Description: MOSFET P-CH 50V 9.7A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9Z20

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z20

IRF9Z20, SiHF9Z20
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
R
R
R
R
V
thCS
t
t
thJA
thJC
C
I
I
V
DS(on)
C
C
Q
V
GS(th)
Q
d(on)
d(off)
GSS
I
Q
DSS
Q
g
L
L
t
SM
I
t
on
oss
t
t
DS
rss
SD
iss
S
rr
fs
gs
gd
r
D
f
S
rr
g
V
V
V
T
DS
Between lead,
6 mm (0.25") from
package and center
of die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
GS
GS
J
essentially independent of operating
T
R
= 25 °C, I
J
= max. rating x 0,8, V
G
Intrinsic turn-on time is negligible (turn-on is dominated by L
= - 10 V
= - 10 V
(MOSFET switching times are
= 25 °C, I
V
V
= 18 Ω, R
DS
DS
V
V
V
DD
TYP.
f = 1.0 MHz, see fig. 9
DS
GS
1.0
TEST CONDITIONS
= max. rating, V
= 2 x V
-
-
= - 25 V, I
= V
F
= 0 V, I
V
V
temperature)
= - 9.7 A, dI/dt = 100 A/µs
V
GS
DS
S
I
GS
max. rating. see fig. 17
D
D
GS
= - 9.7 A, V
GS
= ± 20 V
= - 25 V,
= - 9.7 A, V
= 2.4 Ω, see fig. 16
, I
= 0 V,
D
, I
D
I
= - 250 µA
D
DS
D
= - 250 µA
GS
= - 5.6 A
= - 9.7 A,
= - 5.6 A
= 0 V, T
GS
G
G
GS
= 0 V
DS
= 0 V
J
b
= - 0.8
=125°C
b
D
S
S
MAX.
D
3.1
b
80
-
b
MIN.
- 2.0
0.17
- 50
2.3
56
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S09-0074-Rev. A, 02-Feb-09
Document Number: 90121
TYP.
0.20
0.34
480
320
110
3.5
4.1
5.7
8.2
4.5
7.5
58
17
57
12
25
-
-
-
-
-
-
-
-
- 1000
UNIT
°C/W
MAX.
± 500
- 250
- 4.0
0.28
- 9.7
- 6.3
0.85
- 39
280
6.2
8.6
26
12
86
18
38
S
-
-
-
-
-
-
-
and L
UNIT
D
µC
nA
µA
pF
nC
nH
)
ns
ns
Ω
V
V
S
A
V