IRF9Z20 Vishay, IRF9Z20 Datasheet - Page 3

• Manufacturer Part Number: IRF9Z20
• Description: MOSFET P-CH 50V 9.7A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9Z20

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z20

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 90121
S09-0074-Rev. A, 02-Feb-09
90121_01
90121_02
10
0.1
15
12
10
9
6
3
0
2
5
2
5
2
1
5
2
0
0
80 µs Pulse Test
V
Fig. 2 - Typical Transfer Characteristics
Negative V
Fig. 1 - Typical Output Characteristics
Negative V
DS
T
= 2 x V
J
= 150
V
5
2
GS
GS
°
DS
= - 10, - 8 V
GS ,
C
, Drain-to-Source Voltage (V)
Gate-to-Source Voltage (V)
10
4
T
J
= 25
°
15
6
C
80 µs Pulse Test
20
8
- 7 V
- 6 V
- 5 V
- 4 V
10
25
90121_04
90121_03
10
10
0.1
10
15
12
1
9
6
3
0
3
2
5
2
5
2
5
2
5
2
Fig. 3 - Typical Saturation Characteristics
1
0
Fig. 4 - Maximum Safe Operating Area
80 µs Pulse Test
IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22
IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22
Negative V
Negative V
2
1
Operation in this area limited
IRF9Z20, SiHF9Z20
V
GS
DS
DS ,
= - 10
, Drain-to-Source Voltage (V)
5
Drain-to-Source Voltage (V)
T
T
Single Pulse
2
by R
C
J
= 150 °C
= 25 °C
10
DS(on)
Vishay Siliconix
3
2
- 8 V
www.vishay.com
4
5
10
100
1
10
DC
ms
- 7 V
- 6 V
- 5 V
- 4 V
µs
ms
µs
10
5
2
3