IRF9Z20 Vishay, IRF9Z20 Datasheet - Page 5

• Manufacturer Part Number: IRF9Z20
• Description: MOSFET P-CH 50V 9.7A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9Z20

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z20

Document Number: 90121
S09-0074-Rev. A, 02-Feb-09
90121_10
90121_11
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
1000
800
600
400
200
20
16
12
0
8
4
0
1
0
I
Negative V
D
= - 9.7 A
2
8
Q
V
G
SD
, Total Gate Charge (nC)
DS ,
= - 40 V
V
C
C
C
5
Drain-to-Source Voltage (V)
GS
iss
rss
oss
16
= 0 V, f = 1 MHz
= C
= C
= C
≈ C
10
gs
gd
ds
ds
+ C
+ C
+ C
24
gd
gd
gs
, C
2
C
ds
gd
C
C
C
For test circuit
see figure 17
iss
oss
rss
Shorted
/ (C
32
gs
5
+ C
gd
10
)
40
2
90121_12
90121_13
Fig. 12 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Typical On-Resistance vs. Drain Current
2.0
1.6
1.2
0.8
0.4
0.0
10
8
6
4
2
0
25
0
80 µs Pulse Test
IRF9Z22, SiHF9Z22
Negative I
50
8
T
C
IRF9Z20, SiHF9Z20
, Case Temperature (°C)
16
75
D
, Drain Current (A)
V
GS
IRF9Z20, SiHF9Z20
Vishay Siliconix
= - 10 V
100
24
V
GS
125
32
www.vishay.com
= - 20 V
150
40
5