IRF830ALPBF Vishay, IRF830ALPBF Datasheet - Page 4

• Manufacturer Part Number: IRF830ALPBF
• Description: MOSFET N-CH 500V 5A TO262-3
• Manufacturer: Vishay

Specifications of IRF830ALPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF830ALPBF

Document Number: 91062
IRF830AS/LPbF
1 0 0 0 0
1 0 0 0
1 0 0
100
0.1
1 0
10
1
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
V
V
D S
SD

0.4
T = 150 C
J
Forward Voltage
V
C
C
C
, D ra in-to-S ource V oltage (V)
,Source-to-Drain Voltage (V)
G S
iss
rs s
o s s
1 0
= 0V,
= C
= C
= C
°
0.6
g s
d s
g d
+ C
+ C
C
C
C
g d
g d
f = 1M Hz
rss
os s
iss
0.8

T = 25 C
, C
J
1 0 0
d s

SHO RTE D
°
V
1.0
GS
= 0 V
1 0 0 0
1.2
A
100
0.1
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
10

Fig 6. Typical Gate Charge Vs.

I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C

5.0A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
4
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
100
8
BY R

12
V
V
V
DS(on)

DS
DS
DS

1 0us

1 00us

1 ms

1 0ms
FOR TEST CIRCUIT
= 400V
= 250V
= 100V
SEE FIGURE
1000
16
www.vishay.com
20
13
10000
24
4