IRF830 Vishay, IRF830 Datasheet

IRF830

Manufacturer Part Number

IRF830

Description

MOSFET N-CH 500V 4.5A TO-220AB

Manufacturer

Vishay

Datasheets

1.IRF830.pdf (8 pages)

2.IRF830.pdf (6 pages)

3.IRF830.pdf (9 pages)

Specifications of IRF830

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1.5 Ohm @ 2.7A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

4.5A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

38nC @ 10V

Input Capacitance (ciss) @ Vds

610pF @ 25V

Power - Max

74W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1.5 Ohms

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

4.5 A

Power Dissipation

74 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF830
IRF830IR

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

c. I

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91063

S-81290-Rev. A, 16-Jun-08

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

DS(on)

(Max.) (nC)

(nC)

(V)

≤ 4.5 A, dI/dt ≤ 75 A/µs, V

= 50 V, starting T

(Ω)

TO-220

= 25 °C, L = 24 mH, R

≤ V

= 10 V

, T

N-Channel MOSFET

Single

≤ 150 °C.

500

5.0

= 25 Ω, I

Power MOSFET

= 25 °C, unless otherwise noted

1.5

6-32 or M3 screw

at 10 V

= 4.5 A (see fig. 12).

for 10 s

= 25 °C

TO-220

IRF830PbF

SiHF830-E3

IRF830

SiHF830

= 100 °C

= 25 °C

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

SYMBOL

dV/dt

, T

device

stg

design,

- 55 to + 150

IRF830, SiHF830

LIMIT

300

± 20

0.59

500

280

4.5

2.9

4.5

7.4

3.5

1.1

low

Vishay Siliconix

on-resistance

www.vishay.com

lbf · in

UNIT

W/°C

N · m

V/ns

RoHS*

COMPLIANT

°C

Available

and

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