IRF830ALPBF Vishay, IRF830ALPBF Datasheet

MOSFET N-CH 500V 5A TO262-3

IRF830ALPBF

Manufacturer Part Number
IRF830ALPBF
Description
MOSFET N-CH 500V 5A TO262-3
Manufacturer
Vishay
Datasheets

Specifications of IRF830ALPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
620pF @ 25V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
1.4 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
1.4ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF830ALPBF
l
l
l
l
l
l
l
l
Document Number: 91062
Typical SMPS Topologies:
l
l
Notes 
Benefits
Absolute Maximum Ratings
Applications
I
I
I
P
P
V
dv/dt
T
T
D
D
DM
J
STG
D
D
GS
@ T
@ T
Drive Requirement
dv/dt Ruggedness
Avalanche Voltage and Current
Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply
High Speed Power Switching
Lead-Free
Low Gate Charge Qg Results in Simple
Improved Gate, Avalanche and Dynamic
Fully Characterized Capacitance and
Effective Coss specified (See AN 1001)
@T
@T
Half Bridge and Full Bridge
Two Transistor Forward
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
through … are on page 10
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current †
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Parameter
SMPS MOSFET
GS
GS
@ 10V†
@ 10V†
V
500V
IRF830AS/LPbF
DSS
300 (1.6mm from case )
D
2
HEXFET
Pak
-55 to + 150
R
Max.
0.59
± 30
5.0
3.2
3.1
5.3
20
74
DS(on)
1.40Ω
®
Power MOSFET
max
TO-262
www.vishay.com
PD- 95139
Units
04/21/04
W/°C
5.0A
V/ns
°C
W
I
A
V
D
1

Related parts for IRF830ALPBF

IRF830ALPBF Summary of contents

Page 1

... Document Number: 91062 IRF830AS/LPbF SMPS MOSFET V DSS 500V D @ 10V† 10V† GS 300 (1.6mm from case ) PD- 95139 ® HEXFET Power MOSFET R max I DS(on) D 1.40Ω 5.0A 2 Pak TO-262 Max. Units 5 0.59 W/°C ± 5.3 V/ns - 150 °C 04/21/04 www.vishay.com 1 ...

Page 2

... Intrinsic turn-on time is negligible (turn-on is dominated by L Conditions = 250µ 1mA† 3.0A „ 250µ 0V 125° Conditions = 3.0A† D „† = 1.0V, ƒ = 1.0MHz DS = 400V, ƒ = 1.0MHz 400V …† DS Max. Units 230 mJ 5.0 A 7.4 mJ Max. Units 1.7 °C/W 40 Conditions „ = 5.0A 5. www.vishay.com 2 ...

Page 3

... Fig 4. Normalized On-Resistance IRF830AS/LPbF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V  20µs PULSE WIDTH ° 150 Drain-to-Source Voltage ( 10V 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 3 ...

Page 4

... Fig 8. Maximum Safe Operating Area 5. 400V 250V 100V DS  FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Gate-to-Source Voltage  OPERATION IN THIS AREA LIMITED BY R DS(on 0us  1 00us  0ms ° ° = 150 C 100 1000 V , Drain-to-Source Voltage (V) DS www.vishay.com 13 24 10000 4 ...

Page 5

... IRF830AS/LPbF R G Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms  Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec D.U. 10V d(off thJC C 0.1 1 www.vishay.com 5 ...

Page 6

... Document Number: 91062 500 400 300 + 200 100 0 25 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy 0.0 Fig 12d. Typical Drain-to-Source Voltage  I D TOP 2.2A 3.2A BOTTOM 5. 100 125 ° J Vs. Drain Current 2 alanc he C urrent ( Vs. Avalanche Current www.vishay.com 150 ...

Page 7

... R G • Driver same type as D.U.T. • I controlled by Duty Factor "D" SD • D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Waveform Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFET IRF830AS/LPbF + + =10V www.vishay.com 7 ...

Page 8

... Pak Part Marking Information (Lead-Free WIT COD "L " N ote: "P " embly line pos ition indicates "L ead-F ree" OR Document Number: 91062 ION OGO COD INT E R NAT ION OGO DAT E COD IGNAT ODU CT (OP T IONAL ) L OT COD 2000 COD COD 200 www.vishay.com 8 ...

Page 9

... L OT COD E 1789 19, 1997 INE "C" Note: "P " embly line pos ition indicates "L ead-F ree" Document Number: 91062 IRF830AS/LPbF NAT IONAL OGO CODE NAT IONAL OGO DAT E CODE IGNAT AD CODE 1997 CODE DAT E CODE 1997 INE ODU CT (OP T IONAL ) www.vishay.com 9 ...

Page 10

... C while V is rising from 0 to 80% V oss DS , † Uses IRF830A data and test conditions (BR)DSS Data and specifications subject to change without notice . . 0. 30 DSS TAC Fax: (310) 252-7903 04/04 www.vishay.com 10 ...

Page 11

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

Related keywords