IRF830ALPBF Vishay, IRF830ALPBF Datasheet
![MOSFET N-CH 500V 5A TO262-3](/photos/5/47/54776/pkgto-262_sml.jpg)
IRF830ALPBF
Specifications of IRF830ALPBF
Related parts for IRF830ALPBF
IRF830ALPBF Summary of contents
Page 1
... Document Number: 91062 IRF830AS/LPbF SMPS MOSFET V DSS 500V D @ 10V 10V GS 300 (1.6mm from case ) PD- 95139 ® HEXFET Power MOSFET R max I DS(on) D 1.40Ω 5.0A 2 Pak TO-262 Max. Units 5 0.59 W/°C ± 5.3 V/ns - 150 °C 04/21/04 www.vishay.com 1 ...
Page 2
... Intrinsic turn-on time is negligible (turn-on is dominated by L Conditions = 250µ 1mA 3.0A 250µ 0V 125° Conditions = 3.0A D = 1.0V, ƒ = 1.0MHz DS = 400V, ƒ = 1.0MHz 400V DS Max. Units 230 mJ 5.0 A 7.4 mJ Max. Units 1.7 °C/W 40 Conditions = 5.0A 5. www.vishay.com 2 ...
Page 3
... Fig 4. Normalized On-Resistance IRF830AS/LPbF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage ( 10V 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 3 ...
Page 4
... Fig 8. Maximum Safe Operating Area 5. 400V 250V 100V DS FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on 0us 1 00us 0ms ° ° = 150 C 100 1000 V , Drain-to-Source Voltage (V) DS www.vishay.com 13 24 10000 4 ...
Page 5
... IRF830AS/LPbF R G Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec D.U. 10V d(off thJC C 0.1 1 www.vishay.com 5 ...
Page 6
... Document Number: 91062 500 400 300 + 200 100 0 25 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy 0.0 Fig 12d. Typical Drain-to-Source Voltage I D TOP 2.2A 3.2A BOTTOM 5. 100 125 ° J Vs. Drain Current 2 alanc he C urrent ( Vs. Avalanche Current www.vishay.com 150 ...
Page 7
... R G • Driver same type as D.U.T. • I controlled by Duty Factor "D" SD • D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Waveform Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFET IRF830AS/LPbF + + =10V www.vishay.com 7 ...
Page 8
... Pak Part Marking Information (Lead-Free WIT COD "L " N ote: "P " embly line pos ition indicates "L ead-F ree" OR Document Number: 91062 ION OGO COD INT E R NAT ION OGO DAT E COD IGNAT ODU CT (OP T IONAL ) L OT COD 2000 COD COD 200 www.vishay.com 8 ...
Page 9
... L OT COD E 1789 19, 1997 INE "C" Note: "P " embly line pos ition indicates "L ead-F ree" Document Number: 91062 IRF830AS/LPbF NAT IONAL OGO CODE NAT IONAL OGO DAT E CODE IGNAT AD CODE 1997 CODE DAT E CODE 1997 INE ODU CT (OP T IONAL ) www.vishay.com 9 ...
Page 10
... C while V is rising from 0 to 80% V oss DS , Uses IRF830A data and test conditions (BR)DSS Data and specifications subject to change without notice . . 0. 30 DSS TAC Fax: (310) 252-7903 04/04 www.vishay.com 10 ...
Page 11
... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...