SI7123DN-T1-GE3 Vishay, SI7123DN-T1-GE3 Datasheet - Page 5
![MOSFET P-CH 20V 25A 1212-8](/photos/5/42/54273/pkg_5882_sml.jpg)
SI7123DN-T1-GE3
Manufacturer Part Number
SI7123DN-T1-GE3
Description
MOSFET P-CH 20V 25A 1212-8
Manufacturer
Vishay
Datasheet
1.SI7123DN-T1-GE3.pdf
(7 pages)
Specifications of SI7123DN-T1-GE3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10.6 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
90nC @ 4.5V
Input Capacitance (ciss) @ Vds
3729pF @ 10V
Power - Max
52W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0106 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
16 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-25A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
18.9mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7123DN-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7123DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
41
Company:
Part Number:
SI7123DN-T1-GE3
Manufacturer:
INFINEON
Quantity:
18 562
Part Number:
SI7123DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69655
S10-0347-Rev. D, 15-Feb-10
60
50
40
30
20
10
0
0
25
Power, Junction-to-Case
D
T
C
is based on T
- Case Temperature (°C)
50
75
J(max)
100
60
45
30
15
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
0
125
Package Limited
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
5
4
3
2
1
0
0
125
25
Power, Junction-to-Ambient
T
150
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si7123DN
www.vishay.com
125
150
5