SI7123DN-T1-GE3 Vishay, SI7123DN-T1-GE3 Datasheet - Page 3
![MOSFET P-CH 20V 25A 1212-8](/photos/5/42/54273/pkg_5882_sml.jpg)
SI7123DN-T1-GE3
Manufacturer Part Number
SI7123DN-T1-GE3
Description
MOSFET P-CH 20V 25A 1212-8
Manufacturer
Vishay
Datasheet
1.SI7123DN-T1-GE3.pdf
(7 pages)
Specifications of SI7123DN-T1-GE3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10.6 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
90nC @ 4.5V
Input Capacitance (ciss) @ Vds
3729pF @ 10V
Power - Max
52W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0106 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
16 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-25A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
18.9mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7123DN-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7123DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
41
Company:
Part Number:
SI7123DN-T1-GE3
Manufacturer:
INFINEON
Quantity:
18 562
Part Number:
SI7123DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69655
S10-0347-Rev. D, 15-Feb-10
0.04
0.03
0.02
0.01
0.00
4.0
3.0
2.0
1.0
0.0
80
60
40
20
0
0
0
0
V
On-Resistance vs. Drain Current
10
5
DS
V
= - 10 V, I
DS
1
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
10
20
- Total Gate Charge (nC)
I
D
V
Gate Charge
- Drain Current (A)
GS
D
V
GS
= - 15 A
V
= 5 V thru 2.5 V
GS
= - 4.5 V
15
30
2
= - 1.8 V
V
DS
= - 15 V, I
40
20
V
3
GS
V
V
V
D
GS
= - 2.5 V
GS
GS
50
25
= - 16 A
= 1.5 V
= 2 V
= 1 V
60
30
4
6000
5000
4000
3000
2000
1000
1.4
1.3
1.2
1.1
1.0
0.9
0.8
3.0
2.4
1.8
1.2
0.6
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
0.3
4
V
V
V
DS
T
GS
Transfer Characteristics
GS
0
J
C
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
= - 4.5 V, I
- Gate-to-Source Voltage (V)
iss
rss
T
J
Capacitance
25
= 125 °C
0.6
8
C
T
D
50
oss
J
Vishay Siliconix
= - 15 A
= 25 °C
0.9
12
75
Si7123DN
100
www.vishay.com
1.2
16
T
J
= - 55 °C
125
150
1.5
20
3