SI7123DN-T1-GE3 Vishay, SI7123DN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7123DN-T1-GE3
• Description: MOSFET P-CH 20V 25A 1212-8
• Manufacturer: Vishay

Specifications of SI7123DN-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.6 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 90nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3729pF @ 10V
• Power - Max: 52W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0106 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 16 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -25A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 18.9mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7123DN-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69655
S10-0347-Rev. D, 15-Feb-10
0.04
0.03
0.02
0.01
0.00
4.0
3.0
2.0
1.0
0.0
80
60
40
20
0
0
0
0
V
On-Resistance vs. Drain Current
10
5
DS
V
= - 10 V, I
DS
1
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
10
20
- Total Gate Charge (nC)
I
D
V
Gate Charge
- Drain Current (A)
GS
D
V
GS
= - 15 A
V
= 5 V thru 2.5 V
GS
= - 4.5 V
15
30
2
= - 1.8 V
V
DS
= - 15 V, I
40
20
V
3
GS
V
V
V
D
GS
= - 2.5 V
GS
GS
50
25
= - 16 A
= 1.5 V
= 2 V
= 1 V
60
30
4
6000
5000
4000
3000
2000
1000
1.4
1.3
1.2
1.1
1.0
0.9
0.8
3.0
2.4
1.8
1.2
0.6
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
0.3
4
V
V
V
DS
T
GS
Transfer Characteristics
GS
0
J
C
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
= - 4.5 V, I
- Gate-to-Source Voltage (V)
iss
rss
T
J
Capacitance
25
= 125 °C
0.6
8
C
T
D
50
oss
J
Vishay Siliconix
= - 15 A
= 25 °C
0.9
12
75
Si7123DN
100
www.vishay.com
1.2
16
T
J
= - 55 °C
125
150
1.5
20
3