SI7123DN-T1-GE3 Vishay, SI7123DN-T1-GE3 Datasheet - Page 4
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SI7123DN-T1-GE3
Manufacturer Part Number
SI7123DN-T1-GE3
Description
MOSFET P-CH 20V 25A 1212-8
Manufacturer
Vishay
Datasheet
1.SI7123DN-T1-GE3.pdf
(7 pages)
Specifications of SI7123DN-T1-GE3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10.6 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
90nC @ 4.5V
Input Capacitance (ciss) @ Vds
3729pF @ 10V
Power - Max
52W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0106 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
16 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-25A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
18.9mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7123DN-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7123DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
41
Company:
Part Number:
SI7123DN-T1-GE3
Manufacturer:
INFINEON
Quantity:
18 562
Part Number:
SI7123DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7123DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.2
0.01
100
0.4
0.3
0.2
0.1
0.0
0.1
10
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
T
J
25
- Temperature (°C)
0.4
T
J
= 150 °C
50
I
0.001
D
0.01
100
0.6
= - 250 µA
0.1
10
75
1
0.01
Safe Operating Area, Junction-to-Ambient
* V
Limited by R
100
T
J
GS
0.8
= 25 °C
Single Pulse
> minimum V
T
125
C
V
0.1
DS
= 25 °C
DS(on)
- Drain-to-Source Voltage (V)
150
1.0
*
GS
at which R
1
DS(on)
10
0.04
0.03
0.02
0.01
is specified
50
40
30
20
10
0
0
0.01
1.3
10 ms
100 ms
1 s
10 s
DC
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100
0.1
V
GS
2.3
- Gate-to-Source Voltage (V)
1.0
Time (s)
S10-0347-Rev. D, 15-Feb-10
3.3
Document Number: 69655
10
I
D
T
T
= - 15 A
A
100
A
4.3
= 150 °C
= 25 °C
1000