SI7123DN-T1-GE3 Vishay, SI7123DN-T1-GE3 Datasheet
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SI7123DN-T1-GE3
Specifications of SI7123DN-T1-GE3
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SI7123DN-T1-GE3 Summary of contents
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... Bottom View Ordering Information: Si7123DN-T1-E3 (Lead (Pb)-free) Si7123DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si7123DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Document Number: 69655 S10-0347-Rev. D, 15-Feb-10 3.0 2 1.8 GS 1 6000 5000 4000 3000 2 2000 1000 1.4 1.3 1.2 1 1.0 D 0.9 0 Si7123DN Vishay Siliconix ° 125 ° ° 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 4 ...
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... Si7123DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 250 µA D 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 100 10 0.1 0.01 0.001 www.vishay.com 4 0.04 ...
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... Document Number: 69655 S10-0347-Rev. D, 15-Feb- Package Limited 100 T - Case Temperature (°C) C Current Derating 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7123DN Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...
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... Si7123DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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