SI3812DV-T1-E3 Vishay, SI3812DV-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI3812DV-T1-E3
• Description: MOSFET N-CH 20V 2A 6-TSOP
• Manufacturer: Vishay

Specifications of SI3812DV-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.125 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 0.83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3812DV-T1-E3TR

Si3812DV
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- 0.2
- 0.4
- 0.6
0.1
0.4
0.2
0.0
0.01
10
0.1
1
- 50
2
1
0
10
-4
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
Source-Drain Diode Forward Voltage
- 25
T
0.3
J
V
= 150 °C
SD
0
Single Pulse
- Source-to-Drain Voltage (V)
Threshold Voltage
I
T
D
10
J
= 250 µA
25
- Temperature (°C)
0.6
-3
50
T
Normalized Thermal Transient Impedance, Junction-to-Ambient
J
0.9
= 25 °C
75
This document is subject to change without notice.
10
100
-2
1.2
125
Square Wave Pulse Duration (s)
1.5
150
10
-1
0.40
0.32
0.24
0.16
0.08
0.00
1
8
6
4
2
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
D
1
V
= 1 A
GS
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
0.1
Notes:
P
- Gate-to-Source Voltage (V)
DM
JM
- T
Time (s)
2
A
t
1
= P
t
2
S11-0651-Rev. G, 11-Apr-11
DM
I
D
Document Number: 71069
Z
= 2.4 A
www.vishay.com/doc?91000
thJA
thJA
1
100
3
t
t
(t)
1
2
= 130 °C/W
4
600
10
30
5