SI3812DV-T1-E3 Vishay, SI3812DV-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI3812DV-T1-E3
• Description: MOSFET N-CH 20V 2A 6-TSOP
• Manufacturer: Vishay

Specifications of SI3812DV-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.125 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 0.83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3812DV-T1-E3TR

Si3812DV
Vishay Siliconix
Note:
a. Surface mounted on 1" x 1" FR4 board.
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction to Foot (MOSFET Drain, Schottky Cathode)
MOSFET AND SCHOTTKY SPECIFICATIONS (T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
(MOSFET and Schottky)
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Schottky Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
SCHOTTKY SPECIFICATIONS (T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
b
a
a
a
a
a
Symbol
Symbol
R
V
I
t
t
I
I
DS(on)
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
I
C
GSS
DSS
V
g
Q
R
rm
t
t
SD
t
rr
fs
gs
gd
F
T
r
f
g
g
This document is subject to change without notice.
J
= 25 °C, unless otherwise noted)
Steady State
Steady State
V
V
I
DS
t  5 s
D
DS
 1 A, V
I
= 10 V, V
F
V
= 16 V, V
V
V
I
V
V
V
V
V
= 3.0 A, dI/dt = 100 A/µs
F
V
DS
DS
V
I
R
DS
GS
GS
S
DD
R
DS
= 0.5 A, T
DS
Test Conditions
Test Conditions
= 20 V, T
= 1.5 A, V
= 20 V, T
= 0 V, V
= V
5 V, V
= 4.5 V, I
= 2.5 V, I
= 16 V, V
= 10 V, R
= 5 V, I
GEN
V
I
F
V
R
J
GS
GS
GS
MOSFET
MOSFET
MOSFET
= 0.5 A
R
Schottky
Schottky
Schottky
= 10 V
Device
= 25 °C, unless otherwise noted)
, I
= 4.5 V, R
= 20
= 4.5 V, I
= 0 V, T
GS
J
D
J
GS
D
J
GS
D
D
= 125 °C
= 125 °C
GS
= 250 µA
L
= 75 °C
= 2.4 A
= ± 12 V
= 4.5 V
= 2.4 A
= 1.0 A
= 10 
= 0 V
= 0 V
J
D
g
= 85 °C
= 2.4 A
= 6 
Symbol
R
R
thJA
thJF
Typical
Min.
Min.
0.6
103
130
140
5
1
93
75
80
0.002
0.100
0.160
Typ.
0.42
0.33
0.06
S11-0651-Rev. G, 11-Apr-11
Typ.
0.79
1.5
2.1
0.3
0.4
31
10
30
14
30
5
6
Document Number: 71069
www.vishay.com/doc?91000
Maximum
110
125
150
165
90
95
0.100
± 100
0.125
0.200
Max.
Max.
0.48
0.4
1.1
4.0
3.7
10
10
17
50
25
12
50
1
1
°C/W
Unit
Unit
Unit
mA
nC
nA
µA
pF
ns
V
A

S
V

V