SI3812DV-T1-E3 Vishay, SI3812DV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3812DV-T1-E3
• Description: MOSFET N-CH 20V 2A 6-TSOP
• Manufacturer: Vishay

Specifications of SI3812DV-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.125 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 0.83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3812DV-T1-E3TR

MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 71069
S11-0651-Rev. G, 11-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4.5
3.6
2.7
1.8
0.9
0.0
0.5
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
0.0
0
0
V
I
D
V
DS
1
On-Resistance vs. Drain Current
GS
= 2.4 A
0.5
= 10 V
1
V
= 2.5 V
DS
Q
Output Characteristics
g
2
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
1.0
V
2
GS
3
= 4.5 V thru 3.5 V
3 V
2.5 V
4
1.5
3
2 V
1.5 V
This document is subject to change without notice.
V
5
GS
2.0
= 4.5 V
4
6
2.5
5
7
300
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
10
0
8
6
4
2
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
0.5
GS
= 2.4 A
= 4.5 V
4
V
V
1.0
DS
GS
0
T
Transfer Characteristics
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
1.5
25
Capacitance
8
C
2.0
C
C
50
Vishay Siliconix
T
25 °C
oss
iss
rss
C
www.vishay.com/doc?91000
= - 55 °C
12
2.5
75
Si3812DV
www.vishay.com
100
3.0
16
125 °C
125
3.5
150
4.0
20
3