SI3812DV-T1 VISHAY [Vishay Siliconix], SI3812DV-T1 Datasheet

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SI3812DV-T1

Manufacturer Part Number
SI3812DV-T1
Description
N-Channel 20-V (D-S) MOSFET With Schottky Diode
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Part Number:
SI3812DV-T1-E3
Manufacturer:
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SI3812DV-T1-E3
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Notes
a.
Document Number: 71069
S-31725—Rev. E, 18-Aug-03
MOSFET PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
V
V
Surface Mounted on 1” x 1” FR4 Board.
KA
DS
20
20
20
(V)
(V)
N-Channel 20-V (D-S) MOSFET With Schottky Diode
3 mm
Diode Forward Voltage
0.125 @ V
0.200 @ V
J
J
0.48 V @ 0.5 A
G
r
A
S
= 150_C) (MOSFET)
= 150_C) (MOSFET)
Ordering Information: Si3812DV-T1
DS(on)
V
Parameter
f
(V)
GS
GS
(W)
a
a
= 4.5 V
= 2.5 V
a
a
Top View
1
2
3
TSOP-6
2.85 mm
6
5
4
a
a
a
A
K
N/C
D
I
I
D
F
2.4
1.8
0.5
(A)
= 25_C UNLESS OTHERWISE NOTED)
(A)
T
T
T
T
T
T
A
A
A
A
A
A
= 25_C
= 85_C
= 25_C
= 85_C
= 25_C
= 85_C
Symbol
T
G
V
J
V
V
I
I
P
P
, T
I
I
DM
I
FM
I
DS
GS
KA
D
D
S
F
N-Channel MOSFET
D
D
stg
FEATURES
D LITTLE FOOT Plust
D 100% R
D
S
5 sec
1.05
1.15
0.59
0.52
2.4
1.7
1.0
0.5
8
g
Tested
- 55 to 150
"12
20
20
8
K
A
Steady State
Vishay Siliconix
0.75
0.83
0.53
0.76
0.48
2.0
1.4
0.5
8
Si3812DV
www.vishay.com
Unit
_C
W
W
V
V
A
A
1

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SI3812DV-T1 Summary of contents

Page 1

... 0.5 A TSOP-6 Top View 2.85 mm Ordering Information: Si3812DV-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T Continuous Drain Current (T = 150_C) (MOSFET) = 150_C) (MOSFET Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) ...

Page 2

... Si3812DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Ambient Junction to Foot (MOSFET Drain Schottky Kathode) Junction-to-Foot (MOSFET Drain, Schottky Kathode) Notes a. Surface Mounted on 1” x1” FR4 Board. MOSFET + SCHOTTKY SPECIFICATIONS (T ...

Page 3

... 2 3.6 2.7 1.8 0.9 0.0 0.0 0.5 1.0 1 Total Gate Charge (nC) g Document Number: 71069 S-31725—Rev. E, 18-Aug- 4 2.0 2.5 Si3812DV Vishay Siliconix MOSFET Transfer Characteristics 55_C C 8 25_C 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Capacitance 300 250 C iss 200 150 100 ...

Page 4

... Si3812DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.1 0.00 0.3 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 mA D 0.2 - 0.0 - 0.2 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www ...

Page 5

... Normalized Thermal Transient Impedance, Junction-to-Foot - Square Wave Pulse Duration (sec) 100 125 150 Capacitance 150 120 Reverse Voltage (V KA Si3812DV Vishay Siliconix - SCHOTTKY Forward Voltage Drop 150_C 25_C J 0.1 0 0.2 0.4 0 Forward Voltage Drop (V) ...

Page 6

... Si3812DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot ...

Page 7

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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