SPB11N60C3 Infineon Technologies, SPB11N60C3 Datasheet - Page 9

• Manufacturer Part Number: SPB11N60C3
• Description: MOSFET N-CH 650V 11A D2PAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB11N60C3

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013519; SPB11N60C3INTR; SPB11N60C3XT; SPB11N60C3XTINTR; SPB11N60C3XTINTR

17 Typ. drain source voltage slope
dv/dt = f(R
par.: V
19 Typ. switching losses
E = f(R
par.: V
mWs
V/ns
Rev. 2.6
0.24
0.16
0.12
0.08
0.04
140
120
110
100
90
80
70
60
50
40
30
20
10
0
DS
DS
0
0
G
*) Eon includes SPD06S60 diode
), inductive load, T
=380V, V
=380V, V
commutation losses
G
10
10
dv/dt(off)
), inductive load, T
20
20
GS
GS
Eoff
30
30
=0/+13V, I
=0/+13V, I
dv/dt(on)
40
40
j
=125°C
Eon*
j
50
50
= 125°C
D
D
=11A
=11A
Ω
Ω
R
R
G
G
70
70
Page 9
18 Typ. switching losses
E = f (I
par.: V
20 Avalanche SOA
I
par.: T
AR
mWs
0.025
0.015
0.005
= f (t
0.04
0.03
0.02
0.01
A
11
0
9
8
7
6
5
4
3
2
1
0
10
DS
j
D
0
≤ 150 °C
*) Eon includes SPD06S60 diode
), inductive load, T
AR
-3
=380V, V
commutation losses
)
10
2
-2
Eon*
10
T
4
j (START)
-1
GS
=125°C
10
=0/+13V, R
Eoff
0
6
10
j
=125°C
SPB11N60C3
1
8
10
2007-12-14
G
T
2
j (START)
=6.8Ω
A
=25°C
t
µs
I
AR
D
10
12
4