SPB11N60C3 Infineon Technologies, SPB11N60C3 Datasheet - Page 10

• Manufacturer Part Number: SPB11N60C3
• Description: MOSFET N-CH 650V 11A D2PAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB11N60C3

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013519; SPB11N60C3INTR; SPB11N60C3XT; SPB11N60C3XTINTR; SPB11N60C3XTINTR

21 Avalanche energy
E
par.: I
23 Avalanche power losses
P
parameter: E
Rev. 2.6
AS
AR
mJ
W
350
250
200
150
100
300
200
150
100
= f (T
= f (f )
50
50
D
0
0
20
10
= 5.5 A, V
4
j
)
40
AR
=0.6mJ
60
DD
= 50 V
80
10
100
5
120
Hz
°C
T
f
j
160
10
Page 10
6
22 Drain-source breakdown voltage
V
24 Typ. capacitances
C = f (V
parameter: V
(BR)DSS
pF
10
10
10
10
10
720
680
660
640
620
600
580
560
540
V
-60
4
3
2
1
0
0
SPP11N60C3
DS
= f (T
)
C
100
-20
rss
GS
j
)
=0V, f=1 MHz
200
20
C
C
300
60
iss
oss
SPB11N60C3
100
400
2007-12-14
°C
V
T
V
j
DS
180
600