SUD19P06-60-GE3 Vishay, SUD19P06-60-GE3 Datasheet - Page 6

• Manufacturer Part Number: SUD19P06-60-GE3
• Description: MOSFET P-CH 60V 18.3A TO-252
• Manufacturer: Vishay

Specifications of SUD19P06-60-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1710pF @ 25V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18.3 A
• Power Dissipation: 2300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -19A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 77mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUD19P06-60-GE3TR

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All product specifications and data are subject to change without notice.
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therein, which apply to these products.
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Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
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