SUD19P06-60-GE3 Vishay, SUD19P06-60-GE3 Datasheet

MOSFET P-CH 60V 18.3A TO-252

SUD19P06-60-GE3

Manufacturer Part Number
SUD19P06-60-GE3
Description
MOSFET P-CH 60V 18.3A TO-252
Manufacturer
Vishay
Datasheet

Specifications of SUD19P06-60-GE3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
18.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1710pF @ 25V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.06 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18.3 A
Power Dissipation
2300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-19A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
77mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUD19P06-60-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD19P06-60-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
81 434
Part Number:
SUD19P06-60-GE3
0
Company:
Part Number:
SUD19P06-60-GE3
Quantity:
4 000
Company:
Part Number:
SUD19P06-60-GE3
Quantity:
70 000
Notes:
a. Duty cycle ≤ 1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Based up on T
Document Number: 69253
S-72191-Rev. A, 22-Oct-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current, Single Pulse
Repetitive Avalanche Energy, Single Pulse
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
DS
- 60
(V)
C
0.077 at V
0.060 at V
= 25 °C.
r
DS(on)
Ordering Information: SUD19P06-60-E3 (Lead (Pb)-free)
GS
GS
J
(Ω)
= - 4.5 V
= - 10 V
= 150 °C)
b
G
TO-252
Top View
P-Channel 60-V (D-S) MOSFET
D
S
a
I
D
- 16.8
- 19
(A)
d
Drain Connected to Tab
A
Q
= 25 °C, unless otherwise noted
g
26
(Typ)
New Product
Steady State
T
T
L = 0.1 mH
T
T
C
C
C
A
t ≤ 10 s
= 125 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
APPLICATIONS
• TrenchFET
• 100 % UIS Tested
• High Side Switch for Full Bridge Converter
• DC/DC Converter for LCD Display
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
thJC
I
AS
thJA
GS
DS
AS
D
D
®
stg
Power MOSFET
G
P-Channel MOSFET
Typical
2.7
17
45
S
D
- 55 to 150
2.3
- 18.3
- 8.19
Limit
38.5
± 20
24.2
- 60
- 30
- 22
b, c
SUD19P06-60
c
Maximum
Vishay Siliconix
3.25
21
55
www.vishay.com
°C/W
Unit
Unit
mJ
°C
RoHS
W
COMPLIANT
V
A
1

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SUD19P06-60-GE3 Summary of contents

Page 1

... DS(on) 0.060 0.077 4 TO-252 G D Top View Ordering Information: SUD19P06-60-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current, Single Pulse Repetitive Avalanche Energy, Single Pulse Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUD19P06-60 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... V - Drain-to-Source Voltage (V) DS Capacitance Document Number: 69253 S-72191-Rev. A, 22-Oct-07 New Product ° °C 125 ° iss SUD19P06-60 Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 0.12 0. 0.04 0.02 ...

Page 4

... SUD19P06-60 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 1.6 GS 1.3 1.0 0.7 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS Case Temperature (°C) C Maximum Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69253. Document Number: 69253 S-72191-Rev. A, 22-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUD19P06-60 Vishay Siliconix 1 10 100 www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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