SUD19P06-60-GE3 Vishay, SUD19P06-60-GE3 Datasheet - Page 2
![MOSFET P-CH 60V 18.3A TO-252](/photos/5/46/54657/pkg_5347_sml.jpg)
SUD19P06-60-GE3
Manufacturer Part Number
SUD19P06-60-GE3
Description
MOSFET P-CH 60V 18.3A TO-252
Manufacturer
Vishay
Datasheet
1.SUD19P06-60-GE3.pdf
(6 pages)
Specifications of SUD19P06-60-GE3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
18.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1710pF @ 25V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.06 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18.3 A
Power Dissipation
2300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-19A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
77mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUD19P06-60-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUD19P06-60-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
81 434
SUD19P06-60
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
c
b
c
a
c
c
c
c
c
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
V
r
I
DS(on)
t
t
I
I
C
V
GS(th)
D(on)
C
C
V
Q
Q
d(on)
d(off)
GSS
I
DSS
Q
g
R
SM
I
t
oss
t
t
DS
rss
SD
iss
S
rr
fs
gs
gd
r
f
g
g
C
= 25 °C)
New Product
V
I
V
V
V
V
D
V
DS
GS
GS
DS
DS
b
≅ - 19 A, V
GS
= - 30 V, V
= - 60 V, V
= - 10 V, I
= - 10 V, I
I
= - 60 V, V
F
= 0 V, V
V
V
V
V
V
V
V
V
= - 19 A, di/dt = 100 A/µs
V
DS
DS
I
GS
DS
GS
DS
DS
GS
F
DD
Test Conditions
= - 19 A, V
= V
= - 5 V, V
= 0 V, I
= 0 V, V
= - 10 V, I
= - 60 V, V
= - 15 V, I
= - 4.5 V, I
= - 30 V, R
GEN
f = 1 MHz
DS
GS
D
D
GS
GS
GS
= - 10 A, T
= - 10 A, T
, I
= - 25 V, f = 1 MHz
= - 10 V, R
= - 10 V, I
D
= 0 V, T
D
= 0 V, T
GS
GS
= - 250 µA
= - 250 µA
D
D
GS
D
GS
= ± 20 V
= - 10 A
= - 10 A
L
= - 10 V
= - 5 A
= 0 V
= 3 Ω
= 0 V
J
J
J
J
= 150 ° C
D
= 125 °C
= 125 °C
= 150 °C
g
= - 10 A
= 2.5 Ω
Min
- 60
- 30
- 1
0.048
0.061
1140
- 1.0
Typ
130
4.5
7.0
7.0
22
90
26
65
30
41
S-72191-Rev. A, 22-Oct-07
8
9
Document Number: 69253
± 100
0.060
0.102
0.120
0.077
- 125
1710
Max
- 1.5
- 50
100
- 30
- 30
- 3
- 1
40
15
15
45
61
Unit
nA
µA
nC
pF
ns
ns
Ω
Ω
V
V
A
S
A
V