SUD19P06-60-GE3 Vishay, SUD19P06-60-GE3 Datasheet - Page 4

• Manufacturer Part Number: SUD19P06-60-GE3
• Description: MOSFET P-CH 60V 18.3A TO-252
• Manufacturer: Vishay

Specifications of SUD19P06-60-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1710pF @ 25V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18.3 A
• Power Dissipation: 2300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -19A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 77mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUD19P06-60-GE3TR

SUD19P06-60
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
THERMAL RATINGS
www.vishay.com
4
1.9
1.6
1.3
1.0
0.7
0.4
25
20
15
10
5
0
- 50
0
0.01
0.1
On-Resistance vs. Junction Temperature
I
D
2
1
10
= 10 A
- 25
-4
25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
T
0
Single Pulse
Maximum Drain Current
T
J
vs. Case Temperature
C
- Junction Temperature (°C)
- Case Temperature (°C)
50
25
10
V
-3
GS
75
50
= 10 V
75
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
100
10
125
-2
125
New Product
150
150
Square Wave Pulse Duration (s)
10
-1
0.001
0.01
100
0.1
10
40
10
1
1
0.1
0.0
1
Limited by r
* V
GS
Single Pulse
Source-Drain Diode Forward Voltage
T
C
0.3
T
= 25 °C
V
J
minimum V
1
= 150 °C
DS
V
DS(on)
SD
- Drain-to-Source Voltage (V)
Safe Operating Area
BVDSS Limited
- Source-to-Drain Voltage (V)
1
*
0.6
0
GS
10
at which r
S-72191-Rev. A, 22-Oct-07
0.9
Document Number: 69253
DS(on)
T
J
100
= 25 °C
100
100 ms
1 s
10 s
DC
is specified
1.2
1000
6
1.5
0
0