PSMN2R0-30PL,127 NXP Semiconductors, PSMN2R0-30PL,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN2R0-30PL,127
• Description: MOSFET N-CH 30V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R0-30PL,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.1 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 6810pF @ 12V
• Power - Max: 211W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 100 A
• Power Dissipation: 211 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4899-5; 934063917127

NXP Semiconductors
PSMN2R0-30PL_1
Product data sheet
Fig 17. Input and reverse transfer capacitances as a function of gate-source voltage; typical values
12000
(pF)
C
9000
6000
3000
0
2.5
Rev. 01 — 24 June 2009
5
7.5
V
003aad252
GS
C
C
(V)
iss
rss
10
N-channel 30 V 2.1 mΩ logic level MOSFET
PSMN2R0-30PL
© NXP B.V. 2009. All rights reserved.
9 of 13