PSMN2R0-30PL,127 NXP Semiconductors, PSMN2R0-30PL,127 Datasheet - Page 3
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PSMN2R0-30PL,127
Manufacturer Part Number
PSMN2R0-30PL,127
Description
MOSFET N-CH 30V 100A TO-220AB3
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN2R0-30PL127.pdf
(13 pages)
Specifications of PSMN2R0-30PL,127
Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.1 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
117nC @ 10V
Input Capacitance (ciss) @ Vds
6810pF @ 12V
Power - Max
211W
Mounting Type
Through Hole
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.1 mOhms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
100 A
Power Dissipation
211 W
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4899-5
934063917127
934063917127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN2R0-30PL,127
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN2R0-30PL_1
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
Continuous current is limited by package.
(A)
250
200
150
100
I
D
50
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
(1)
50
100
Conditions
T
T
V
V
t
T
T
t
V
R
p
p
j
j
mb
mb
150
GS
GS
GS
GS
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
T
= 50 Ω; unclamped
003aad248
mb
(°C)
200
j
j
Rev. 01 — 24 June 2009
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
mb
mb
= 25 °C; see
= 25 °C
GS
Fig 2.
D
= 20 kΩ
= 100 A; V
P
Figure 1
(%)
der
Figure 1
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel 30 V 2.1 mΩ logic level MOSFET
Figure 3
sup
≤ 30 V;
50
PSMN2R0-30PL
[1]
[1]
[1]
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2009. All rights reserved.
T
mb
Max
30
30
20
100
100
943
211
175
175
100
943
555
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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