PSMN2R0-30PL,127 NXP Semiconductors, PSMN2R0-30PL,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN2R0-30PL,127
• Description: MOSFET N-CH 30V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R0-30PL,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.1 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 6810pF @ 12V
• Power - Max: 211W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 100 A
• Power Dissipation: 211 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4899-5; 934063917127

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN2R0-30PL_1
Product data sheet
Symbol
R
Fig 3.
Fig 4.
th(j-mb)
Z
(K/W)
th (j-mb)
10
10
10
10
10
10
10
(A)
10
I
D
-1
-2
-3
-4
4
3
2
1
1
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
-6
δ = 0.5
0.2
0.1
0.05
0.02
single shot
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
10
-5
Limit R
Conditions
see
10
DSon
(1)
-4
Figure 4
= V
1
DS
/ I
D
Rev. 01 — 24 June 2009
10
-3
10
-2
DC
N-channel 30 V 2.1 mΩ logic level MOSFET
10
10
-1
PSMN2R0-30PL
Min
-
P
V
DS
1
Typ
0.41
(V)
t
100 μs
1 ms
10 ms
100 ms
p
10 μs
T
© NXP B.V. 2009. All rights reserved.
t
p
(s)
003aad295
003aad247
δ =
Max
0.71
t
T
p
t
10
10
2
Unit
K/W
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