PSMN050-80PS,127 NXP Semiconductors, PSMN050-80PS,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN050-80PS,127
• Description: MOSFET N-CH 80V 22A TO-220AB3
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN050-80PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 51 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 633pF @ 12V
• Power - Max: 56W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 22 A
• Power Dissipation: 56 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4901-5; 934063909127

NXP Semiconductors
Table 6.
[1]
[2]
PSMN050-80PS_1
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
SD
r
Tested to JEDEC standards where applicable.
Measured 3 mm from package.
(A)
I
40
D
30
20
10
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
2
10
8
6
4
…continued
6
Conditions
I
see
I
V
V
S
S
GS
DS
= 15 A; V
= 50 A; dI
(V) =
Figure 17
= 40 V
8
5.5
003aad046
V
DS
4.5
(V)
5
GS
10
S
Rev. 01 — 10 June 2009
/dt = 100 A/µs; V
= 0 V; T
j
= 25 °C;
Fig 6.
GS
R
(mΩ)
N-channel 80 V 50 mΩ standard level MOSFET
100
DSon
80
60
40
20
= 0 V;
of drain current; typical values
Drain-source on-state resistance as a function
0
V
GS
10
(V) =
PSMN050-80PS
5
Min
-
-
-
20
Typ
0.86
32
28
30
5.5
© NXP B.V. 2009. All rights reserved.
003aad047
I
D
Max
1.2
-
-
6
(A)
8
10
20
40
Unit
V
ns
nC
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