PSMN050-80PS,127 NXP Semiconductors, PSMN050-80PS,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN050-80PS,127
• Description: MOSFET N-CH 80V 22A TO-220AB3
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN050-80PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 51 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 633pF @ 12V
• Power - Max: 56W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 22 A
• Power Dissipation: 56 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4901-5; 934063909127

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
PSMN050-80PS_1
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)R
DS(AL)S
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
repetitive drain-source
avalanche energy
non-repetitive
drain-source avalanche
energy
Conditions
T
T
V
V
t
T
T
t
see
V
R
p
p
j
j
mb
mb
GS
GS
GS
GS
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
Figure 3
= 10 V; T
= 10 V; T
= 10 V; T
= 50 Ω; unclamped
j
j
Rev. 01 — 10 June 2009
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
mb
mb
= 25 °C
= 25 °C
GS
D
= 20 kΩ
= 22 A; V
Figure 1
N-channel 80 V 50 mΩ standard level MOSFET
Figure 1
sup
≤ 80 V;
PSMN050-80PS
[1][2]
[3]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
80
80
20
16
22
88
56
175
175
22
88
-
18
Unit
V
V
V
A
A
A
W
°C
°C
A
A
J
mJ
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