PSMN050-80PS,127 NXP Semiconductors, PSMN050-80PS,127 Datasheet - Page 10

• Manufacturer Part Number: PSMN050-80PS,127
• Description: MOSFET N-CH 80V 22A TO-220AB3
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN050-80PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 51 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 633pF @ 12V
• Power - Max: 56W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 22 A
• Power Dissipation: 56 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4901-5; 934063909127

NXP Semiconductors
PSMN050-80PS_1
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
10
GS
8
6
4
2
0
charge; typical values
0
5
V
DS
= 40 V
10
100
(A)
80
60
40
20
I
S
0
Q
0
G
003aad050
(nC)
15
Rev. 01 — 10 June 2009
0.5
175 °C
Fig 16. Input, output and reverse transfer capacitances
(pF)
1
10
10
N-channel 80 V 50 mΩ standard level MOSFET
C
10
3
2
T
10
as a function of drain-source voltage; typical
values
j
V
= 25 °C
-1
SD
003aad049
(V)
1.5
1
PSMN050-80PS
10
© NXP B.V. 2009. All rights reserved.
V
DS
003aad051
(V)
C
C
C
oss
rss
iss
10
2
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