IRF9Z30PBF Vishay, IRF9Z30PBF Datasheet - Page 7
![MOSFET P-CH 50V 18A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF9Z30PBF
Manufacturer Part Number
IRF9Z30PBF
Description
MOSFET P-CH 50V 18A TO-220AB
Manufacturer
Vishay
Series
HEXFET®r
Specifications of IRF9Z30PBF
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 9.3A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.14 Ohm @ 10 V
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
74000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
-18A
Drain Source Voltage Vds
-50V
On Resistance Rds(on)
93mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fall Time
64 ns
Rise Time
110 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF9Z30PBF
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91092.
Document Number: 91092
S11-0513-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Re-applied
voltage
Rever e
recovery
current
+
R
-
g
D.U.T.
• Compliment N-Channel of D.U.T. for driver
Note
a. V
Note
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
= - 5 V for logic level and - 3 V drive device
P.W.
D
D
waveform
This datasheet is subject to change without notice.
waveform
Peak Diode Recovery dV/dt Test Circuit
Body diode forward drop
Ripple ≤ 5 %
Period
Body diode forward
+
-
Fig. 14 - For P-Channel
• I
• dV/dt controlled by R
• D.U.T. - device under te t
current
Diode recovery
D
controlled by duty factor “D”
Circuit layout con ideration
• Low stray inductance
• round plane
• Low leakage inductance
dV/dt
current tran former
dI/dt
D =
-
g
Period
P.W.
+
I
V
V
D
DD
= - 10 V
+
-
IRF9Z34, SiHF9Z34
V
DD
a
www.vishay.com/doc?91000
Vishay Siliconix
www.vishay.com
7