IRF9Z30PBF Vishay, IRF9Z30PBF Datasheet - Page 3
![MOSFET P-CH 50V 18A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF9Z30PBF
Manufacturer Part Number
IRF9Z30PBF
Description
MOSFET P-CH 50V 18A TO-220AB
Manufacturer
Vishay
Series
HEXFET®r
Specifications of IRF9Z30PBF
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 9.3A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.14 Ohm @ 10 V
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
74000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
-18A
Drain Source Voltage Vds
-50V
On Resistance Rds(on)
93mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fall Time
64 ns
Rise Time
110 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF9Z30PBF
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91092
S11-0513-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91092_01
91092_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
10
2
0
2
0
1
1
10
10
Bottom
-1
-1
Top
Top
Bottom
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
DS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
DS ,
V
V
GS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
This datasheet is subject to change without notice.
25 °C
175 °C
C
10
C
10
= 175 °C
- 4.5 V
= 25 °C
- 4.5 V
1
1
91092_04
91092_03
Fig. 4 - Normalized On-Resistance vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
10
10
Fig. 3 - Typical Transfer Characteristics
0
1
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
4
I
V
D
GS
= - 18 A
= - 10 V
- V
5
T
GS ,
J ,
IRF9Z34, SiHF9Z34
Junction Temperature (°C)
25
Gate-to-Source Voltage (V)
°
6
C
175
7
www.vishay.com/doc?91000
Vishay Siliconix
°
C
20 µs Pulse Width
V
8
DS
= -
www.vishay.com
25 V
9
10
3