IRF9Z30PBF Vishay, IRF9Z30PBF Datasheet - Page 3

• Manufacturer Part Number: IRF9Z30PBF
• Description: MOSFET P-CH 50V 18A TO-220AB
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRF9Z30PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.14 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -18A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 93mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fall Time: 64 ns
• Rise Time: 110 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9Z30PBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91092
S11-0513-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91092_01
91092_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
10
2
0
2
0
1
1
10
10
Bottom
-1
-1
Top
Top
Bottom
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
DS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
DS ,
V
V
GS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
This datasheet is subject to change without notice.
25 °C
175 °C
C
10
C
10
= 175 °C
- 4.5 V
= 25 °C
- 4.5 V
1
1
91092_04
91092_03
Fig. 4 - Normalized On-Resistance vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
10
10
Fig. 3 - Typical Transfer Characteristics
0
1
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
4
I
V
D
GS
= - 18 A
= - 10 V
- V
5
T
GS ,
J ,
IRF9Z34, SiHF9Z34
Junction Temperature (°C)
25
Gate-to-Source Voltage (V)
°
6
C
175
7
www.vishay.com/doc?91000
Vishay Siliconix
°
C
20 µs Pulse Width
V
8
DS
= -
www.vishay.com
25 V
9
10
3