IRF9Z30PBF Vishay, IRF9Z30PBF Datasheet - Page 4

• Manufacturer Part Number: IRF9Z30PBF
• Description: MOSFET P-CH 50V 18A TO-220AB
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRF9Z30PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.14 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -18A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 93mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fall Time: 64 ns
• Rise Time: 110 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9Z30PBF

IRF9Z34, SiHF9Z34
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91092_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91092_05
2000
1600
1200
800
400
20
16
12
8
4
0
0
10
0
I
D
0
= - 18 A
- V
5
DS ,
Q
G
, Total Gate Charge (nC)
10
Drain-to-Source Voltage (V)
15
V
V
C
C
C
DS
GS
iss
rss
oss
= - 30 V
= 0 V, f = 1 MHz
= C
= C
= C
20
10
gs
gd
ds
V
1
+ C
DS
+ C
= - 48 V
25
gd
gd
For test circuit
see figure 13
This datasheet is subject to change without notice.
, C
C
C
C
ds
iss
oss
rss
30
Shorted
35
91092_07
91092_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
1
0
3
5
2
2
5
2
5
2
1
0.0
0.1
Fig. 8 - Maximum Safe Operating Area
2
- V
- V
5
1.0
SD
DS
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
175
2
°
T
T
Single Pulse
C
2.0
C
J
by R
= 175 °C
= 25 °C
5
10
DS(on)
S11-0513-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91092
2
3.0
25
°
5
C
100
1
10
10
10
ms
ms
2
4.0
µs
V
µs
2
GS
= 0 V
5
10
5.0
3