IRF9Z30PBF Vishay, IRF9Z30PBF Datasheet

MOSFET P-CH 50V 18A TO-220AB

IRF9Z30PBF

Manufacturer Part Number
IRF9Z30PBF
Description
MOSFET P-CH 50V 18A TO-220AB
Manufacturer
Vishay
Series
HEXFET®r
Datasheets

Specifications of IRF9Z30PBF

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 9.3A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.14 Ohm @ 10 V
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
74000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
-18A
Drain Source Voltage Vds
-50V
On Resistance Rds(on)
93mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fall Time
64 ns
Rise Time
110 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF9Z30PBF
Features
Description
The HEXFET
geometry and unique processing of the HEXFET design achieve very low on-state resistence combined with high
transconductance and extreme device ruggedness.
The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation. They
retain all of the features of the more common N-Channel HEXFETs such as voltage control, very fast switching, ease of
paralleling, and excellent temperature stability.
P-Channel HEXFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers
circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity
connection. Applications include motor control, audio amplifiers, switched mode converters, control circuit and pulse
amplifiers.
www.irf.com
R
R
R
Absolute Maximum Ratings
V
V
V
I
I
I
P
I
I
T
T
Lead Temperature
Thermal Resistance
D
D
DM
LM
L
J
STG
DS
DGR
GS
D
θJC
θCS
θJA
@ T
@ T
P-Channel Verasatility
Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
Excellent Temperature Stability
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
®
technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Drain-to-Source Voltage
Drain-to-Gate Voltage (R
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Inductive Current, Clamped (L= 100µH) See Fig. 14
Unclamped Inductive Current(Avalanche Current)
Operating Junction and
Storage Temperature Range
Parameter
300 (0.063 in. (1.6mm) from case for 10s)
GS
=20KΩ)
GS
GS
Parameter
Product Summary
IRF9Z30PbF
Part Number
G
See Fig. 15
Typ.
–––
–––
1.0
HEXFET
V
DS
-50
D
S
(V)
IRF9Z30PbF
-55 to + 150
®
Max.
R
–––
1.7
POWER MOSFET
Max.
80
0.59
-3.1
DSON
±20
-50
-50
-18
-11
-60
-60
74
0.14
TO-220AB
(Ω)
PD- 96095
Units
°C/W
03/27/07
I
Units
W/°C
D
-18
°C
W
V
A
A
(A)
1

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IRF9Z30PBF Summary of contents

Page 1

... R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com Product Summary Part Number IRF9Z30PbF G Parameter =20KΩ See Fig. 15 300 (0.063 in. (1.6mm) from case for 10s) Parameter PD- 96095 IRF9Z30PbF ® HEXFET POWER MOSFET (Ω (A) DS DSON D -50 0.14 -18 D TO-220AB S Max. Units ...

Page 2

... IRF9Z30PbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS V Gate Threshold Voltage GS(th) I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage I Drain-to-Source Leakage Current DSS I On- State Drain Current D(on) R Static Drain-to-Source On-Resistance DS(on) Forward Transconductance Input Capacitance ...

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... IRF9Z30PbF 4 www.irf.com ...

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... IRF9Z30PbF 6 www.irf.com ...

Page 7

... Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 03/2007 IRF9Z30PbF PART NUMBER DATE CODE YEAR 0 = 2000 ...

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