IRF9Z30PBF Vishay, IRF9Z30PBF Datasheet
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IRF9Z30PBF
Specifications of IRF9Z30PBF
Related parts for IRF9Z30PBF
IRF9Z30PBF Summary of contents
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... R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com Product Summary Part Number IRF9Z30PbF G Parameter =20KΩ See Fig. 15 300 (0.063 in. (1.6mm) from case for 10s) Parameter PD- 96095 IRF9Z30PbF ® HEXFET POWER MOSFET (Ω (A) DS DSON D -50 0.14 -18 D TO-220AB S Max. Units ...
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... IRF9Z30PbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS V Gate Threshold Voltage GS(th) I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage I Drain-to-Source Leakage Current DSS I On- State Drain Current D(on) R Static Drain-to-Source On-Resistance DS(on) Forward Transconductance Input Capacitance ...
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... Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 03/2007 IRF9Z30PbF PART NUMBER DATE CODE YEAR 0 = 2000 ...