SI4876DY-T1-E3 Vishay, SI4876DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4876DY-T1-E3
• Description: MOSFET N-CH 20V 14A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4876DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 21A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 4.5V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.005 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 14 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 5mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Power Dissipation Pd: 3.6W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4876DY-T1-E3TR

Si4876DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71312.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.0
0.4
0.2
0.01
0.01
- 50
0.1
0.1
2
1
2
1
10
10
-4
-4
- 25
0.02
0.05
0.05
Duty Cycle = 0.5
0.02
Duty Cycle = 0.5
0.2
0.1
0.2
0.1
0
Single Pulse
Threshold Voltage
I
T
D
J
= 250 µA
25
- Temperature (°C)
10
-3
50
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
-2
125
150
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
60
50
40
30
20
10
0
10
10
1
-1
-2
10
-1
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
- T
Time (s)
t
1
A
1
S09-0221-Rev. F, 09-Feb-09
= P
t
2
Document Number: 71312
DM
Z
10
thJA
thJA
100
t
t
1
2
(t)
= 67 °C/W
100
10
600
600