SI4876DY-T1-E3 Vishay, SI4876DY-T1-E3 Datasheet

MOSFET N-CH 20V 14A 8-SOIC

SI4876DY-T1-E3

Manufacturer Part Number
SI4876DY-T1-E3
Description
MOSFET N-CH 20V 14A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4876DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 mOhm @ 21A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 4.5V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.005 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
14 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
21A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
5mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Power Dissipation Pd
3.6W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4876DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4876DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4876DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71312
S09-0221-Rev. F, 09-Feb-09
Ordering Information: Si4876DY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
20
(V)
G
S
S
S
0.0075 at V
0.005 at V
1
2
3
4
Si4876DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
Top View
SO-8
J
a
= 150 °C)
GS
a
GS
(Ω)
= 4.5 V
= 2.5 V
N-Channel 20-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
A
I
= 25 °C, unless otherwise noted
D
21
17
Steady State
Steady State
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
Symbol
Symbol
T
R
R
Available
J
V
V
E
I
I
P
, T
DM
I
AS
I
thJA
thJF
GS
DS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
10 s
3.6
1.9
21
15
29
67
13
3
G
N-Channel MOSFET
- 55 to 150
± 12
20
50
42
88
Steady State
D
S
Maximum
1.3
1.6
0.8
14
10
35
80
16
Vishay Siliconix
Si4876DY
www.vishay.com
°C/W
Unit
Unit
mS
mJ
°C
W
V
A
1

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SI4876DY-T1-E3 Summary of contents

Page 1

... GS SO Top View Ordering Information: Si4876DY-T1-E3 (Lead (Pb)-free) Si4876DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si4876DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71312 S09-0221-Rev. F, 09-Feb 100 120 140 °C J 0.8 1.0 1.2 Si4876DY Vishay Siliconix 8000 C iss 6000 4000 2000 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.4 1.2 1.0 ...

Page 4

... Si4876DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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