SI4876DY-T1 VISHAY [Vishay Siliconix], SI4876DY-T1 Datasheet
SI4876DY-T1
Available stocks
Related parts for SI4876DY-T1
SI4876DY-T1 Summary of contents
Page 1
... SO Top View Ordering Information: Si4876DY Si4876DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Avalanche Current Single Avalanche Energy ...
Page 2
... Si4876DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
Page 3
... V - Source-to-Drain Voltage (V) SD Document Number: 71312 S-03950—Rev. C, 26-May 100 120 140 T = 25_C J 0.8 1.0 1.2 Si4876DY Vishay Siliconix Capacitance 8000 C iss 6000 4000 C 2000 oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 4 ...
Page 4
... Si4876DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 = 250 0.2 - 0.0 - 0.2 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...