si4876dy Vishay, si4876dy Datasheet

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si4876dy

Manufacturer Part Number
si4876dy
Description
N-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4876DY
Manufacturer:
SHARP
Quantity:
97
Part Number:
SI4876DY
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4876dy-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
si4876dy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71312
S-31726—Rev. E, 18-Aug-03
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
Ordering Information: Si4876DY
20
20
(V)
J
ti
G
S
S
S
t A bi
1
2
3
4
J
J
LEERER MERKER
LEERER MERKER
0.0075 @ V
Si4876DY-T1 (with Tape and Reel)
0.005 @ V
= 150_C)
= 150_C)
t
Top View
LEERER MERKER
LEERER MERKER
SO-8
Parameter
Parameter
r
DS(on)
LEERER MERKER
LEERER MERKER
GS
GS
(W)
N-Channel 20-V (D-S) MOSFET
= 4.5 V
= 2.5 V
8
7
6
5
LEERER MERKER
D
D
D
D
Steady State
Steady State
L = 0 1 mH
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 85_C
= 25_C
= 85_C
D
21
17
(A)
_
Symbol
Symbol
T
G
R
R
R
V
J
V
E
I
I
P
P
DM
, T
I
I
AS
I
thJA
thJF
DS
GS
D
D
AS
S
D
D
stg
N-Channel MOSFET
D TrenchFETr Power MOSFET
D 100% R
D
S
10 secs
Typical
3.6
1.9
21
15
29
67
13
3
g
Tested
–55 to 150
"12
20
50
42
88
Steady State
Maximum
Vishay Siliconix
1.3
1.6
0.8
14
10
35
80
16
Si4876DY
www.vishay.com
Unit
Unit
_C/W
mS
C/W
mJ
_C
W
W
V
V
A
A
1

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si4876dy Summary of contents

Page 1

... Top View Ordering Information: Si4876DY Si4876DY-T1 (with Tape and Reel) Parameter Drain-Source Voltage Gate-Source Voltage LEERER MERKER LEERER MERKER Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Avalanche Current Single Avalanche Energy ...

Page 2

... Si4876DY Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current LEERER MERKER On-State Drain Current Drain-Source On-State Resis- Drain Source On State Resis LEERER MERKER LEERER MERKER tance t LEERER MERKER Forward Transconductance ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 71312 S-31726—Rev. E, 18-Aug 100 120 140 T = 25_C J 0.8 1.0 1.2 Si4876DY Vishay Siliconix Capacitance 8000 C iss 6000 4000 C 2000 oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si4876DY Vishay Siliconix Threshold Voltage 0.4 = 250 0.2 –0.0 –0.2 –0.4 –0.6 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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